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| NTE2392 MOSFET N-Channel Enhancement Mode, High Speed Switch Description: The NTE2392 is an N-Channel Enhancement Mode Power MOS Field Effect Transistor. Easy drive and very fast switching times make this device ideal for high speed switching applications. Typical applications include switching mode power supplies, uninterruptible power supplies, and motor speed control. Features: D Fast Switching D Low Drive Current D Ease of Paralleling D No Second Breakdown D Excellent Temperature Stability Absolute Maximum Ratings: Drain-Source Voltage (Note 1), VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Drain-Gate Voltage (RGS = 20k, Note 1), VDGR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Gate-Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Pulsed Drain Current (Note 3), IDM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160A Clamped Inductive Current (L = 100H), ILM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160A Continuous Drain Current, ID TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40A TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A Total Dissipation (TC = +25C), Ptot . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Lead Temperature (During Soldering, 0.063 in. (1.6mm) from case, 10sec), TL . . . . . . . . . . +300C Maximum Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.83C/W Typical Thermal Resistance, Case-to-Sink (Note 4), RthCS . . . . . . . . . . . . . . . . . . . . . . . . . . 0.1C/W Maximum Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . 30C/W Note Note Note Note 1. 2. 3. 4. TJ = +25 to +150C Pulse test: Pulse Width 300s, Duty Cycle 2%. Repetitive Rating: Pulse width limited by maximum junction temperature. Mounting surface flat, smooth, and greased. Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Zero-Gate Voltage Drain Current Symbol V(BR)DSS IDSS Test Conditions ID = 250A, VGS = 0 VGS = 0, VDS = 100V VGS = 0, VDS = 80V, TC = +125C Gate-Body Leakage Current Gate Threshold Voltage On-State Drain Current Static Drain-Source On Resistance Forward Transconductance Input Capactiance Output Capacitance Reverse Transfer Capactiance Turn-On Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Internal Drain Inductance IGSS VGS(th) ID(on) RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd LD Measured between the contact screw on header that is closer to source and gate pins and center of die Measured from the source pin, 6mm (.25 in.) from header VGS = 10V, ID = 50A, VDS = 80V VDD = 24V, ID = 20A, RI = 4.7 VDS = 0, VGS = 20V VDS = VGS, ID = 250A VDS > ID(on) x RDS(on) max, VGS = 10V, Note 2 VGS = 10V, ID = 20A, Note 2 VDS > ID(on) x RDS(on) max, ID = 20A, Note 2 VDS = 25V, VGS = 0, f = 1MHz Min 100 - - - 2 40 - 9 - - - - - - - - - - - Typ - - - - - - 0.045 11 2000 1000 350 - - - - 63 27 36 5.0 Max - 250 1000 100 4 - 0.055 - 3000 1500 500 35 100 125 100 120 - - - Unit V A A nA V A W mho pf pf pf ns ns ns ns nC nC nC nH Internal Source Inductance LS - 12.5 - nH Source-Drain Diode Ratings and Characteristics Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Forward ON Voltage Reverse Recovery Time Reverse Recovered Charge IS ISM VSD trr Qrr Note 3 IS = 40A, VGS = 0, TJ = +25C, Note 3 IF = 40A, diF/dt = 100A/s, TJ = +150C - - - - - - - - 600 3.3 40 160 2.5 - - A A V ns C Note 2. Pulse test: Pulse Width 300s, Duty Cycle 2%. Note 3. Repetitive Rating: Pulse width limited by maximum junction temperature. .135 (3.45) Max .350 (8.89) .875 (22.2) Dia Max Seating Plane .312 (7.93) Min .040 (1.02) Source 1.187 (30.16) .665 (16.9) .156 (3.96) Dia (2 Holes) .215 (5.45) .430 (10.92) .188 (4.8) R Max Gate .525 (13.35) R Max Drain/Case |
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